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| NTZD5110N Small Signal MOSFET 60 V, 310 mA, Dual N-Channel with ESD Protection, SOT-563 Features * * * * * * * * * Low RDS(on) Improving System Efficiency Low Threshold Voltage ESD Protected Gate Small Footprint 1.6 x 1.6 mm These are Pb-Free Devices Load/Power Switches Driver Circuits: Relays, Lamps, Displays, Memories, etc. Battery Management/Battery Operated Systems Cell Phones, Digital Cameras, PDAs, Pagers, etc. http://onsemi.com V(BR)DSS 60 RDS(on) MAX 1.6 W @ 10 V 2.5 W @ 4.5 V ID Max 310 mA Applications D1 D2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted.) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C PD ID PD IDM TJ, TSTG IS TL ESD Symbol VDSS VGS ID Value 60 20 294 212 250 310 225 280 590 -55 to 150 350 260 900 mW mA C mA C V mW mA Unit V V mA G1 G2 S1 N-Channel MOSFET S2 Steady State tv5 s TA = 25C TA = 85C tv5s tp = 10 ms 6 1 SOT-563-6 CASE 463A MARKING DIAGRAM S7 D S7 = Specific Device Code D = Date Code Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8 from case for 10 s) Gate-Source ESD Rating (HBM, Method 3015) PINOUT: SOT-563 S1 1 6 D1 G1 2 5 G2 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t v 5 s (Note 1) Symbol RqJA Max 500 447 Unit C/W D2 3 Top View 4 S2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu. area = 1.127 in sq [1 oz] including traces). ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. (c) Semiconductor Components Industries, LLC, 2007 April, 2007 - Rev. 3 1 Publication Order Number: NTZD5110N/D NTZD5110N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted.) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V VDS = 60 V VGS = 0 V VDS = 50 V Gate-to-Source Leakage Current IGSS VGS = 0 V, ID = 250 mA - TJ = 25C TJ = 125C TJ = 25C 60 - - - - - - - - 71 - - - - - - - - 1.0 500 100 "10 450 150 nA mA nA nA V mV/C mA Symbol Test Condition Min Typ Max Unit VDS = 0 V, VGS = "20 V VDS = 0 V, VGS = "10 V VDS = 0 V, VGS = "5.0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) gFS CISS COSS CRSS QG(TOT) QG(TH) QGS QGD td(ON) tr td(OFF) tf TJ = 25C TJ = 85C VGS = 10 V, VDD = 30 V, ID = 200 mA, RG = 10 W VGS = 4.5 V, VDS = 10 V; ID = 200 mA VGS = 0 V, f = 1.0 MHz, VDS = 20 V VGS = VDS, ID = 250 mA - VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 200 mA VDS = 5.0 V, ID = 200 mA 1.0 - - - - - 4.0 1.19 1.33 80 2.5 - 1.6 2.5 - S V mV/C W Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage - - - - - - - 24.5 4.2 2.2 0.7 0.1 0.3 0.1 - - - - - - - pF nC - - - - 12 7.3 63.7 30.6 - - - - ns VSD VGS = 0 V, IS = 200 mA - - 0.8 0.7 1.2 - V 2. Surface-mounted on FR4 board using 1 in. sq. pad size (Cu. area = 1.127 in sq [1 oz] including traces). 3. Pulse Test: pulse width v 300 ms, duty cycle v2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTZD5110N TYPICAL CHARACTERISTICS 1.6 VGS = 10 V 9.0 V 8.0 V 7.0 V 6.0 V 5.0 V 4.5 V ID, DRAIN CURRENT (A) 4.0 V 1.2 ID, DRAIN CURRENT (A) 1.2 0.8 0.8 3.5 V 3.0 V 0.4 2.5 V 0 0 2 4 6 0.4 TJ = 25C 0 TJ = 125C 0 2 TJ = -55C 4 6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = -55C VGS = 4.5 V TJ = 125C TJ = 85C TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 Figure 2. Transfer Characteristics VGS = 10 V TJ = 125C TJ = 85C TJ = 25C TJ = -55C 0.2 0.4 0.6 0.8 1.0 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 3. On-Resistance vs. Drain Current and Temperature 2.4 2.0 1.6 1.2 0.8 0.4 ID = 200 mA ID = 500 mA RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2 Figure 4. On-Resistance vs. Drain Current and Temperature ID = 0.2 A 1.8 VGS = 4.5 V VGS = 10 V 1.4 1.0 2 4 6 8 10 0.6 -50 -25 0 25 50 75 100 125 150 VGS, GATE-TO-SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (C) Figure 5. On-Resistance vs. Gate-to-Source Voltage Figure 6. On-Resistance Variation with Temperature http://onsemi.com 3 NTZD5110N TYPICAL CHARACTERISTICS Ciss C, CAPACITANCE (pF) VGS, GATE-TO-SOURCE VOLTAGE (V) 30 5 4 3 2 1 0 TJ = 25C ID = 0.2 A 20 TJ = 25C VGS = 0 V Coss 10 0 Crss 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 10 VGS = 0 V IS, SOURCE CURRENT (A) Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1 TJ = 85C 0.1 TJ = 25C 0.01 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current ORDERING INFORMATION Device NTZD5110NT1 NTZD5110NT1G Package SOT-563 SOT-563 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTZD5110N PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A -X- 6 5 4 C K 1 2 3 B -Y- D 6 PL 5 0.08 (0.003) S G J M XY DIM A B C D G J K S SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTZD5110N/D |
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